Wen Qiye

Doctor of Engineering

With Certificate of Graduation for Doctorate Study

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Gender:Male
Date of Employment:2005-04-01
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Home > Scientific Research > Paper Publications

Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

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Affiliation of Author(s):[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;[2]Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA;[3]Univ Houston, Dept Phys, Houston, TX 77204 USA;[4]Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA;[5]Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
Journal:APPLIED PHYSICS LETTERS
Key Words:Aluminum oxide - High resolution transmission electron microscopy - Metal insulator boundaries - Semiconductor insulator boundaries - Polymer films - Alumina - Epitaxial growth - Quality control - Metal substrates - Semiconducting films - Thin films - X ray diffraction - Oxide films - Vanadium dioxide
Abstract:Vanadium oxide thin films with well controlled phases such as rhombohedra V2O3 and monoclinic VO2 were synthesized on Al2O3 (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V2O3 and VO2 films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V2O3 and VO2 films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745843]
Document Type:Article
Volume:101
Issue:7
ISSN No.:0003-6951
Translation or Not:no