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个人信息Personal Information
教授 博士生导师
性别:男
学历:博士研究生毕业
学位:工学博士学位
入职时间:2005-04-01
办公地点:电子科技大学5号科研楼
Preparation and orientation mechanism analysis of(BiTm)_(3)(GaFe)_(5)O_(12) magneto-optical single crystal film with out-of-plane orientation
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所属单位:[1]电子科技大学电子科学与工程学院,成都611731
发表刊物:Acta Physica Sinica
关键字:liquid-phase epitaxy;magnetocrystalline anisotropic;lattice mismatch
摘要:Liquid-phase epitaxy(LPE)is one of the best techniques for the preparation of single crystal garnet films.However,the specific Faraday rotation angle of Yttrium iron garnet(YIG)is small,and its easy magnetization axis is parallel to the film surface.The YIG requires a large external saturation field,which cannot meet the development needs of magneto-optical devices.It is found that Bi-substituted YIG(Bi:YIG)film has a larger specific Faraday angle.By adjusting the easy magnetization axis of Bi:YIG perpendicular to the film surface,the saturation magnetization of Bi:YIG can be reduced,so that it can work under a small external magnetic field.This meets the development needs of miniaturization and energy saving of magneto-optical device.The saturation magnetization of garnet film can be effectively reduced by substituting Ga^(3+)for YIG crystal,mainly for Fe3+at the 24d position of its tetrahedron.And the lattice constants of Gd_(3)Ga_(5)O_(12)(GGG)and YIG are 1.2383 nm and 1.2376 nm,respectively.However,the radius of Bi^(3+)(10.8 nm)is larger than that of Y^(3+)(9.0 nm),the lattice mismatch of garnet film increases with the incorporation of Bi^(3+).In order to neutralize the lattice expansion caused by Bi^(3+),Tm^(3+)(8.69 nm)with a radius smaller than that of Y^(3+)(9.0 nm)is selected.Based on the theoretical analysis of the magnetocrystalline anisotropy of garnet film,(BiTm)_(3)(GaFe)_(5)O_(12) monocrystalline films with different growth temperatures and different thickness values are grown by LPE on GGG(111)substrates.The experimental results show that when the thickness of epitaxial film is greater than 1μm,the influence of shape anisotropy on magnetocrystalline anisotropy can be ignored.With the increase of growth temperature,the substitution number of Bi^(3+)ions decreases gradually,the lattice constant of epitaxial film decreases gradually,and the lattice mismatch first decreases and then increases.Then,the state of compressive stress gradually changes into that of tensile stress.Compared with growth-induced anisotropy,the stressinduced anisotropy is dominant in the change of magnetocrystalline anisotropy.The Verdet constant of(BiTm)_(3)(GaFe)5O_(12) film is 11.8×10^(4) rad/Tm@1064 nm.The results show that the prepared(BiTm)_(3)(GaFe)_(5)O_(12) mono-crystalline films have great development potential in magneto-optical devices.
文献类型:Journal article (JA)
卷号:70
期号:10
页面范围:296-303
ISSN号:1000-3290
是否译文:否
CN号:11-1958/O4
