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所属单位：[1]电子科技大学,电子薄膜与集成器件国家重点实验室,成都610054;[2]电子科技大学,通信抗干扰技术国家级重点实验室,成都610054

发表刊物：Acta Physica Sinica

关键字：vanadium dioxide, electrically-driven metal-insulator transition, silicon substrate, aluminium oxide

摘要：Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation （011）, the VO2 films have an excellent thermal-induced metal-insulator transition （MIT）. The electrically-driven MIT （E-MIT） characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.

文献类型：Article

卷号：64

期号：1

页面范围：017102-1-017102-5

ISSN号：1000-3290

是否译文：否

CN号：11-1958/O4