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所属单位：[1]电子科技大学微电子与固体电子学院,成都610054

发表刊物：Journal of Functional Materials and Devices

关键字：spin-valves ; giant magneto-resistance ; amorphous film

摘要：The spin valve structure magnetic multilayer arrays of CoNbZr/Co/Cu/Co and NiFe/Co/Cu/ Co were fabricated by lift - off technology. The static GMR and dynamics GMR behaviors were measured. The results show that CoNbZr layer has good linear response to the rapid changes of magnetic field. The CoNbZr/Co/Cu/Co spin valve element shows good GMR characteristics compared with the NiFe/Co/Cu/ Co spin valve element. The CoNbZr/Co/Cu/Co spin - valve element can be applied to spin - electronic devices including magnetic random access memory.

文献类型：Journal article (JA)

卷号：12

期号：1

页面范围：40-44

ISSN号：1007-4252

是否译文：否

CN号：31-1708/TB