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所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Films & Integrated Devices, Chengdu 610054, Peoples R China;[2]Tianjin Univ, Coll Precis Instrument & Optoelect Engn, Inst Laser & Optoelect, Tianjin 300072, Peoples R China

发表刊物：CHINESE PHYSICS LETTERS

摘要：Fe-doped CeO2 is synthesized by ceramic method and the effects of Fe doping on the structure and properties are characterized by ordinary methods and terahertz-time domain spectrometer (THz-TDS) technique. Our results show that pure CeO2 only has a small dielectric constant epsilon of 4, while a small amount of Fe (0.9 at.%) doping into CeO2 promotes densification and induces a large epsilon of 23. From the THz spectroscopy, it is found that for undoped CeO2 both the power absorption and the index of refraction increase with frequency, while for Fe-doped CeO2 we measure a remarkable transparency together with a flat index curve. The absorption coefficient of Fe-doped CeO2 at frequency ranging from 0.2 to 1.8 THz is less than 0.35 cm(-1), implying that Fe-doped CeO2 is a potential THz optical material.

文献类型：Article

卷号：26

期号：4

ISSN号：0256-307X

是否译文：否