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所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Sichuan, Peoples R China;[2]Dongguan Univ Technol, Sch Elect Engineer & Intelligentizat, Dongguan 523808, Peoples R China;[3]CAEP, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China

发表刊物：MATERIALS RESEARCH EXPRESS

关键字：terahertz spectroscopy; modulators; nano-materials; thin film devices; graphene

摘要：Graphene field-effect-transistor (GFET) based terahertz (THz) modulators usually possess an unfulfilling modulation depth (MD) of 15% similar to 20%. In this work we developed a flexible GFET based THz modulator, where the graphene monolayer is coated with an organic high-K dielectric as the screening layer and an ion-gel layer as the gate. With this exquisite composite modulating structure, the new device possesses a significantly enhanced modulation depth (MD) up to 70% over a broad frequency band, an extremely low insert loss (IL) of 1.3 dB, and unexpected good structural and properties stability. The large intrinsic MD, low IL, as well as its flexibility, render this performance enhanced modulator versatile in fabrication of novel THz devices, such as multi-level modulator, for nonplanar or wearable applications.

文献类型：Article

卷号：5

期号：11

ISSN号：2053-1591

是否译文：否