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所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;[2]Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

发表刊物：CHINESE PHYSICS LETTERS

关键字：II-VI semiconductors - Frequency modulation - Powders - Room temperature - Magnetic moments - Magnetic semiconductors - Zinc oxide - Wide band gap semiconductors

摘要：We prepare pure single-phase Co:ZnO powders introducing controllable interstitial Zn-i by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism (RT-FM) exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2 mu(B)/Co. The FM of Co:ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zn, defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co:ZnO powders.

文献类型：Article

卷号：24

期号：10

页面范围：2955-2958

ISSN号：0256-307X

是否译文：否

CN号：11-1959/O4