Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases
点击次数：发表时间：2025-05-23
- 所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;[2]Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA;[3]Univ Houston, Dept Phys, Houston, TX 77204 USA;[4]Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA;[5]Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
- 发表刊物：APPLIED PHYSICS LETTERS
- 关键字：Aluminum oxide - High resolution transmission electron microscopy - Metal insulator boundaries - Semiconductor insulator boundaries - Polymer films - Alumina - Epitaxial growth - Quality control - Metal substrates - Semiconducting films - Thin films - X ray diffraction - Oxide films - Vanadium dioxide
- 摘要：Vanadium oxide thin films with well controlled phases such as rhombohedra V2O3 and monoclinic VO2 were synthesized on Al2O3 (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V2O3 and VO2 films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V2O3 and VO2 films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745843]
- 文献类型：Article
- 卷号：101
- 期号：7
- ISSN号：0003-6951
- 是否译文：否
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- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
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- 2012 当选： 新世纪优秀人才计划
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