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电子邮箱:
kaikaix@uestc.edu.cn
所在单位:
集成电路科学与工程学院(示范性微电子学院)
学历:
博士研究生毕业
办公地点:
No. 4, Section 2, North Jianshe Road, Chengdu, China 610054
性别:
男
联系方式:
+86-28-83208233
学位:
工学博士学位
职称:
教授
在职信息:
在岗
毕业院校:
加利福尼亚大学尔湾分校
博士生导师
学科:
微电子学与固体电子学
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[21] K. Xu* et al. , Electro-optical modulation processes in Si-PMOSFET LEDs operating in the avalanche light emission mode,
[22] Yang Ou and K. Xu* , Theoretical and numerical characterization of a 40Gbps long-haul multi-channel transmission system with dispersion compensation,
[23] G. Li , H. Chen , J. Polleux , L. Snyman , and K. Xu* , Silicon light-emitting device with application in on-chip micro-opto-electro-mechanical and chemical-opto-electro micro systems,
[24] G. Li , W. Sun , J. Zhao , S. Liu , and K. Xu* , Analysis of simulation of multi-terminal electro-optic modulator based on p-n junction in reverse bias,
[25] G. Li , W. Sun , Q. Yu , J. Zhao , S. Liu , and K. Xu* , Opportunities for employing IGBT in photo-switch based on silicon avalanche LEDs,
[26] Z. Zhang , H. Liu , and K. Xu* , Gate-controlled diode structure based electro-optical interfaces in standard Silicon-CMOS integrated circuitry,
[27] C. Viana , K. Ogudo , J. Polleux , K. Xu , and L. Snyman , Higher intensity SiAvLEDs in a RF bipolar process through carrier energy and carrier momentum engineering,
[28] G. Li , Q. Yu , and K. Xu* , Increased efficiency of silicon light-emitting device in standard Si-CMOS technology,
[29] G. Li , Z. Wen , Q. Yu , H. Liu , and K. Xu* , On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device,
[30] Z. Zhang , Z. Zhang , and K. Xu* , Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices,
[31] Z. Wen , Q. Yu , Z. Zhang , and K. Xu* , Field-effect electroluminescence spectra of reverse-biased PN Junctions in silicon device for microdisplay,
[32] G. Li , W. Sun , J. Zhao , S. Liu , and K. Xu* , A new silicon LED concept for future opto-coupler system applications in short-distance,
[33] L. Snyman , G. Li , Q. Yu , Z. Ma. Z. Li , C. Viana , J. Polleux , K. Ogudo , and K. Xu* , Light-emitting devices in Si CMOS and RF bipolar integrated circuits,
[34] Q. Yu , K. Xu* , Z. Ma , R. Fan , and X. Tang , Silicon substrate interconnection circuit design,
[35] G. Li , Q. Yu , C. Viana , K. Ogudo , J. Polleux , L. Snyman , and K. Xu* , Silicon LEDs toward high frequency on-chip link,
[36] G. Li , Q. Yu , Z. Li , Z. Ma , W. Sun , S. Liu , and K. Xu* , Design and fabrication of a monolithic optoelectronic integrated Si CMOS LED based on hot-carrier effect,
[37] K. Xu* , Integrated silicon directly modulated light source using P-Well in standard CMOS technology,
[38] X. Huang , D. Cheng , and K. Xu* , Modal characteristics of coupled resonator vertical cavity laser diode,
[39] G. Sun , F. Lin , S. Ma , A. Zhang , W. Su , W. Sun* , R. Ye , J. Wei , K. Xu , S. Liu , and C. Zhang , A novel high latch-up immunity electrostatic discharge protection device for power rail in high-voltage ICs,
[40] R. Hu , Y. Wang , L. Snyman , Q. Yu , J. Polleux , C. Viana , K. Ogudo , Y. Wang , J. Yuan , K. Xu* , and Z. Zhang , Silicon light-emitting device for high speed analog-to-digital conversion,
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