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电子邮箱:
kaikaix@uestc.edu.cn
所在单位:
集成电路科学与工程学院(示范性微电子学院)
学历:
博士研究生毕业
办公地点:
No. 4, Section 2, North Jianshe Road, Chengdu, China 610054
性别:
男
联系方式:
+86-28-83208233
学位:
工学博士学位
职称:
教授
在职信息:
在岗
毕业院校:
加利福尼亚大学尔湾分校
博士生导师
学科:
微电子学与固体电子学
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[1] K. Li , D. Cheng , and K. Xu* , Super-high speed fiber optical communication systems design and simulation,
[2] X. Huang , D. Cheng , and K. Xu* , Multimode communication system used in local area network,
[3] K. Xu et al. , L. Li , and X. Huang , An 0.35μm/CMOS 2.4Gb/s LVDS for high-speed DAC,
[4] D. Cheng and K. Xu* , Modeling and analysis of check-in procedure by simulation,
[5] K. Xu* , Comparison of dispersion compensation in a 40Gbps WDM optical communication system,
[6] G. Li and K. Xu* , A light-emitting-device (LED) with monolithic integration on bulk silicon in a standard CMOS technology,
[7] G. Li and K. Xu* , Silicon electro-optic modulator based on the theory of gate-controlled diode,
[8] G. Li and K. Xu* , The path forward: silicon electro-optical interface for modern complementary metal-oxide-semiconductor integrated circuits (CMOS ICs),
[9] G. Li , H. Chen , L. Snyman , K. Ogudo , B. Huang , and K. Xu* , Silicon light-emitting device in standard CMOS technology,
[10] J. Polleux , Y. Wang , X. Huang , Q. Yu , Z. Zhang , S. Wu , and K. Xu* , A perspective on high speed analog to digital conversion with silicon light-emitting devices,
[11] L. Snyman , Q. Yu , J. Polleux , K. Ogudo , N. Ning , and K. Xu* , Light emission in silicon: from device physics to applications,
[12] K. Xu* , Si-LED- Silicon light-emitting device in standard CMOS technology,
[13] K. Xu* , Electro-optical modulation processes in Si-MOS LEDs operating in the avalanche light emission mode,
[14] K. Xu , J. Polleux , and L. Snyman* , Stimulation of 450, 650 and 850 nm optical emissions from custom designed silicon LED devices by utilizing carrier energy and carrier momentum engineering,
[15] G. Li and K. Xu* , A three terminal silicon-PMOSFET like light emitting device (LED) for optical intensity modulation,
[16] G. Li and K. Xu* , A novel way to improve the quantum efficiency of silicon light emitting diode in a standard silicon complementary metal-oxide-semiconductor technology,
[17] G. Li and K. Xu* , Hot-carrier induced photon-emission in silicon metal-oxide-semiconductor field-effect-transistor,
[18] K. Xu* , Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs,
[19] G. Li and K. Xu* , Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology,
[20] K. Xu* , On the design and optimization of three-terminal light-emitting device in silicon CMOS technology,
共44条 1/3
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