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教授,博导,国家级青年人才,研究方向为功率半导体器件与功率集成技术,主持国家自然科学基金面上项目、青年基金项目,参与国家科技重大专项、国家自然科学基金及多项横向合作课题项目。在本领域顶级期刊IEEE EDL和IEEE TED发表论文23篇,论文3次入选IEEE EDL封面Highlight论文,获IEEE CDS Excellent Student Paper Award优秀论文奖;连续在本领域顶级国际会议IEEE ISPSD作大会报告5次,在IEEE ICSICT作邀请报告;申请发明专利83项,授权41项,含美国专利2项。
获国家科技进步二等奖、工信部技术发明二等奖、中国产学研合作创新成果二等奖,电子科技大学学术新人奖、电子科技大学“青年人才学术托举工程”、四川省优秀毕业生、中国电子学会优秀博士论文奖,并由此入选2020年该学会首届“电子信息前沿青年学者出版工程”,出版专著《功率超结器件》,同时获工信部学术出版基金和国家出版基金资助。
1. 获奖
(1) 国家科技进步二等奖
(2) 中国产学研合作创新成果二等奖
(3) 工信部技术发明二等奖
(4) 电子科技大学学术新人奖
(5) 中国电子学会优秀博士学位论文奖
(6) IEEE CDS Excellent Student Paper Award
2. 研究方向
(1) 超结SJ功率半导体器件
(2) 匀场耐压层HOF器件
(3) 功率集成技术
3. 代表性成果
功率半导体始终是电能变换的心脏,是智慧电能管理的核心,更是节能减排的关键和基础器件,通过理论与实验相结合,获得代表性学术成果如下:
(1) 提出超结器件最低比导通电阻Ron,min理论,包括“三新”:新模式(NFD模式)、新模型(ES模型)和新方法(Ron,min法);获得理论最低比导通电阻Ron,min,使半导体材料实现理想“准线性”关系。理论指导研制的横向超结器件Ron,sp较同类器件降低67.8%;
(2) 提出新型匀场HOF耐压层,在传统耐压层内部引入周期性MIS结构,实现器件表面及体内电场均匀化,研制的HOF器件Ron,sp较传统Triple RESURF器件理论极限降低33.8%,论文3次入选IEEE EDL封面Highlight;
(3) 研制的屏蔽栅Split-gate器件比导通电阻较传统降低28.6%;研制的纳米硅器件临界场达106.7 V/μm,远高传统约30 V/μm。
4. 代表性科研项目
(1) 国家自然科学基金,功率半导体非完全雪崩击穿NFA新原理及其高临界场新器件研究,2023/01-2026/12,在研,主持
(2) 国家自然科学基金,功率半导体器件新型MIS耐压层等势场调制基础理论与新结构,2021/01-2024/12,在研,主持
(3) 国家自然科学基金,纳米硅高临界场的能量弛豫机理与模型探索,2018/01-2020/12,已结题,主持
(4) 广东自然科学基金,新型匀场耐压层功率半导体器件模型与新结构,2022/01-20223/12,在研,主持
(5) 重点实验室开放项目,基于亚微米超结先进工艺的高压集成器件研究,2022/07-2024/12,在研,主持
(6) 横向项目, FS型IGBT技术开发,2018/07-2019/10,已结题,主持
(7) 博士后面上项目,高功率半超结器件最低比导通电阻Ron,min理论与新结构,2018/05-2021/04,已结题,主持
(8) 广东自然科学基金,部分超结器件最低比导通电阻全域优化模型与新结构研究,2018/01-2020/12,已结题,主持
(9) 中央高校启动金,超薄SOI器件临界场模型与部分超结新结构研究,2017/05-2018/12,已结题,主持
(10) 国家自然科学基金,对称极化掺杂增强型功率GaN HFET机理与工艺实现研究,2019/01-2022/12,在研,主研
(11) 四川省科技计划项目,低功耗新结构超结VDMOS芯片关键技术及应用,2019/01-2020/12,已结题,主研
(12) 四川省科技计划项目,横向功率高压器件纵向结型耐压层优化设计模型与新结构研究(重点),2018/01-2020/12,已结题,主研
(13) 横向项目,智能高侧电源开关产品开发及技术平台建设和专项研究,2018/11-2021/12,在研,主研
(14) 横向项目,600V SOI高压集成器件研发,2018/08-2019/06,已结题,主研
5. 代表性论文
5.1 期刊论文
(1) Wentong Zhang*, Lingying Wu, Hongbo Li, Ming Qiao, Nailong He, Sen Zhang, Zhaoji Li, Bo Zhang, “Novel Bulk Homogenization Field Devices with Reducing Process Difficulty,” IEEE Electron Device Letters, vol. 45, no. 7, pp. 1249-1252, July 2024.
(2) Wentong Zhang*, Jiamin He, Qiyi Wu, Nailong He, Sen Zhang, Ming Qiao, Zhaoji Li, Bo Zhang, “A New Multi-Dimensional Depletion Concept of Homogenization Field Devices,” IEEE Electron Device Letters, vol. 44, no. 10, pp. 1708-1711, Oct. 2023.
(3) Wentong Zhang*, Ning Tang, Yuting Liu, Yang Yu, Nailong He, Sen Zhang, Ming Qiao, Zhaoji Li, and Bo Zhang, “Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT,” IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 1843-1848, April 2023.
(4) Wentong Zhang*, Fengrun Tian, Yuting Liu, Teng Liu, Nailong He, Sen Zhang, Ming Qiao, Zhaoji Li, and Bo Zhang, “Experiments of Sub-Micron Superjunction Devices With Ultra-Low Specific On-Resistance,” IEEE Electron Device Letters, vol. 44, no. 7, pp. 1160-1163, July 2023.
(5) Wentong Zhang*, Ke Zhang, Lingying Wu, Yan Sun, Xinkai Guo, Zhuo Wang, Ming Qiao, Zhaoji Li, and Bo Zhang, “The Minimum Specific On-Resistance of 3-D Superjunction Devices,” IEEE Transactions on Electron Devices, vol. 70, no. 3, pp. 2528-2533, Mar. 2023.
(6) Wentong Zhang*, Le Zhu, Fengrun Tian, Jie Luo, Nailong He, Zhili Zhang, Sen Zhang, Jinping Zhang, Ming Qiao, Zhaoji Li, Bo Zhang, “Experiments of Homogenization Field LDMOS With Trench-Stopped Depletion,” IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2528-2533, May 2022.
(7) Wentong Zhang*, Yang Wu, Ke Zhang, Ming Qiao, Sen Zhang, Nailong He, Zhili Zhang, Zhaoji Li, and Bo Zhang, “Experiments of a Lateral Power Device With Complementary Homogenization Field Structure,” IEEE Electron Device Letters, vol. 42, no. 11, pp. 1638-1641, Nov. 2021.
(8) Wentong Zhang*, Xuhan Zhu, Ming Qiao, Zhuo Wang, Guangsheng Zhang, Zhili Zhang, Nailong He, Sen Zhang, Zhaoji Li, Bo Zhang, “Analytical Model and Mechanism of Homogenization Field for Lateral Power Devices”, IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 3956-3962, Aug. 2021.
(9) Wentong Zhang*, Kun Yang, Xuhan Zhu, Sen Zhang, Boyong He, Zhuo Wang, Ming Qiao, Zhaoji Li, Bo Zhang, “Analytical Design and Experimental Verification of Lateral Superjunction Based on Global Region Normalization Method”, IEEE Transactions on Electron Devices, vol. 68, no. 5, pp. 2372-2377, May 2021.
(10) Wentong Zhang*, Junqing He, Shikang Cheng, Sen Zhang, Boyong He, Ming Qiao, Zhaoji Li, and Bo Zhang, “Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect,” IEEE Electron Device Letters, vol. 41, no. 9, pp. 1392-1395, Sept. 2020.
(11) Wentong Zhang*, Rui Wang, Shikang Cheng, Yan Gu, Sen Zhang, Boyong He, Ming Qiao, Zhaoji Li, Bo Zhang, “Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability,” IEEE Electron Device Letters, vol. 40, no. 12, pp. 1969-1972, Dec. 2019.
(12) Wentong Zhang*, Lu Li, Ming Qiao, Zhenya Zhan, Shikang Cheng, Sen Zhang, Boyong He, Xiaorong Luo, Zhaoji Li, Bo Zhang, “A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region,” IEEE Electron Device Letters, vol. 40, no. 7, pp. 1151-1154, July 2019.
(13) Wentong Zhang*, Li Ye, Dong Fang, Ming Qiao, Kui Xiao, Boyong He, Zhaoji Li, and Bo Zhang, “Model and Experiments of Small-Size Vertical Devices With Field Plate,” IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1416-1421, March 2019.
(14) Wentong Zhang*, Chunlan Lai, Ming Qiao, Zhaoji Li, and Bo Zhang, “The Minimum Specific on-Resistance of Semi-SJ Device,” IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 598-604, Jan. 2019.
(15) Wentong Zhang*, Zhenya Zhan, Yang Yu, Shikang Cheng, Yan Gu, Sen Zhang, Xiaorong Luo, Zehong Li, Ming Qiao, Zhaoji Li, and Bo Zhang. “Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI,” IEEE Electron Device Letters, vol. 38, no. 11, pp. 1555-1558, Nov. 2017.
(16) Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. “Optimization and new structure of super junction with isolator layer,” IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 217-223, Jan. 2017.
(17) Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. The Ron,min of balanced symmetric vertical super junction based on R-well model, IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 224-230, Jan. 2017.
(18) Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li, “Optimization of Lateral Super Junction based on the Minimum Specific On-resistance,” IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1984-1990, May. 2016.
(19) Wentong Zhang*, Bo Zhang, Zehong Li, Ming Qiao and Zhaoji Li, “Theory of Super Junction with NFD and FD Modes based on Normalized Breakdown Voltage,” IEEE Transactions on Electron Devices, vol. 62, no. 12, pp. 4114-4120, Dec. 2015.
(20) Wentong Zhang*, Bo Zhang, Ming Qiao, Lijuan Wu, Kun Mao and Zhaoji Li, “A Novel Vertical Field Plate Lateral Device with Ultra-low Specific On-resistance,” IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 518-524, Feb. 2014.
(21) Wentong Zhang*, Lijuan Wu, Ming Qiao, Xiaorong Luo, Bo Zhang and Zhaoji Li, “Novel high-voltage power lateral MOSFET with adaptive buried electrodes,” Chinese Physics B, vol. 21, no. 7, pp. 444-449, 2012.
(22) Bo Zhang*, Wentong Zhang, Jian Zu, Ming Qiao, Sen Zhang, Zhili Zhang, Boyong He, Zhaoji Li, “Novel Homogenization Field Technology in Lateral Power Devices,” IEEE Electron Device Letters, vol. 41, no. 11, pp. 1677-1680, Nov. 2020.
(23) Bo Zhang*, Wentong Zhang, Zehong Li, Ming Qiao and Zhaoji Li, “Equivalent Substrate Model for Lateral Super Junction Device,” IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 525-532, Feb. 2014.
(24) Bo Zhang*, Wentong Zhang, Le Zhu, Jian Zu, Ming Qiao, Zhaoji Li, “Review of technologies for high-voltage integrated circuits,” Tsinghua Science and Technology, vol. 27, no. 3, pp. 495-511, Jun. 2022. (特邀综述)
(25) Bo Zhang*, Wentong Zhang, Song Pu, Ming Qiao, and Zhaoji Li, “Superjunction power semiconductor devices (in Chinese),” Micro/nano Electronics and Intelligent Manufacturing, vol. 1, no. 1, pp: 5-19, Mar. 2019. (创刊号-特邀综述)
(26) Bo Zhang*, Wentong Zhang, Ming Qiao, Zhenya Zhan, and Zhaoji Li, “Concept and design of super junction devices,” Journal of Semiconductors, vol. 39, no. 2, pp: 021001-1-021001-12, 2018. (特邀综述)
(27) Bo Zhang*, Wentong Zhang, Ming Qiao, and Zhaoji Li, “Theory and optimization of the power super junction device (in Chinese),” Sci Sin-Phys Mech Astron, vol. 46, no. 10, pp: 107302-1-107302-18, 2016. (特邀综述)
(28) Changwang Wang, Xuan Li*, Lingfeng Li, Xiaochuan Deng, Wentong Zhang*, Liu Zheng, Yansheng Zou, Weining Qian, Zhaoji Li, Bo Zhang, “Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization,” IEEE Electron Device Letters, vol. 43, no. 12, pp. 2025-2028, Oct. 2022.
5.2 会议论文
(1) Wentong Zhang, Shiyao Cai, Lingying Wu, Nailong He, Sen Zhang, Ming Qiao, Zhaoji Li and Bo Zhang*, “Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS,” 16th International Seminar on Power Semiconductors (ISPS), pp. 149-153, Aug. 2023.
(2) 章文通, 功率半导体器件电荷场调制机制与设计方法, 华为无线Massive MIMO技术论坛, 邀请报告
(3) Wentong Zhang, Zhaoji Li, Bo Zhang*, “A New Type of Homogenization Field Power Semiconductor Devices,” IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2022, pp. 978-1-6654-6906-7 (Invited Oral).
(4) Wentong Zhang*, Jian Zu, Xuhan Zhu, Sen Zhang, Zhili Zhang, Nailong He, Boyong He, Ming Qiao, Zhaoji Li, and Bo Zhang, “Mechanism and Experiments of a Novel Dielectric Termination Technology Based on Equal-potential Principle,” IEEE 32st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 38-41, Sep. 2020. (Oral).
(5) Wentong Zhang*, Song Pu, Chunlan Lai, Li Ye, Shikang Cheng, Sen Zhang, Boyong He, Zhuo Wang, Xiaorong Luo, Ming Qiao, Zhaoji Li, and Bo Zhang, “Non-full Depletion Mode and its Experimental Realization of the Lateral Superjunction,” IEEE 30st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 475-478, May. 2018. (Oral).
(6) Wentong Zhang*, Ming Qiao, Lijuan Wu, Ke Ye, Zhuo Wang, Zhigang Wang, Xiaorong Luo, Sen Zhang, Wei Su, Bo Zhang, and Zhaoji Li, “Ultra-low Specific On-resistance SOI High Voltage Trench LDMOS with Dielectric Field Enhancement Based on ENBULF Concept,” IEEE 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 329-332, May. 2013. (Oral).
(7) Teng Liu, Wentong Zhang, Zhili Zhang, Hua Song, Nailong He, Sen Zhang, Zhaoji Li and Bo Zhang*, “New Variable Selective Etching Technology for Thick SOI Devices,” IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2022, pp. 978-1-6654-6906-7 (Oral)
(8) Nailong He, Sen Zhang, Hao Wang, Jingchuan Zhao, Long Zhang, Siyang Liu, Weifeng Sun, Quanyu Zhao, Ning Tang, Wentong Zhang, Zhaoji Li, Bo Zhang, “Ultra-high Voltage BCD Technology Integrated 1000 V 3-D Split-Superjunction devices,” IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022, pp. 305-308. (Oral).
(9) Nailong He*, Sen Zhang, Xuhan Zhu, Xuchao Li, Hao Wang, Wentong Zhang, and Boyong He, “A 0.25 μm 700 V BCD Technology with Ultra-low Specific On-resistance SJ-LDMOS,” IEEE 32st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 419-422, Sep. 2020.
(10) Guangsheng Zhang, Wentong Zhang*, Junqing He, Xuhan Zhu, Sen Zhang, Jingchuan Zhao, Zhili Zhang, Ming Qiao, Xin Zhou, Zhaoji Li, and Bo Zhang, “Experiments of a Novel low on-resistance LDMOS with 3-D Floating Vertical Field Plate,” IEEE 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 507-510, May. 2019. (Oral).
6 授权专利:
(1) Wentong Zhang, Ning Tang, Ke Zhang, Nailong He, Ming Qiao, Zhaoji Li, Bo Zhang, SOI lateral homogenization field high voltage power semiconductor device, manufacturing method and application thereof, 2024.01.30, 美国, US 11,888,022 B2
(2) 章文通, 吴旸, 唐宁, 乔明, 李肇基, 张波, 集成亚微米超结的横向功率半导体器件及其制造方法, ZL202110956767.1, 2023.10.31
(3) 章文通, 唐宁, 张科, 刘雨婷, 乔明, 何乃龙, 张森, 李肇基, 张波, 一种高压集成功率半导体器件及其制造方法, ZL202210447055.1, 2023.10.27
(4) 章文通, 张科, 唐宁, 田丰润, 乔明, 何乃龙, 张森, 李肇基, 张波, 一种全隔离衬底耐压功率半导体器件及其制造方法, ZL202210447123.4, 2023.10.03
(5) 章文通, 吴旸, 张科, 何乃龙, 乔明, 李肇基, 张波, SOI横向匀场高压功率半导体器件及制造方法和应用, ZL202110952823.4, 2023.05.26
(6) 章文通, 吴旸, 唐宁, 乔明, 李肇基, 张波, 体内异性掺杂的功率半导体器件及其制造方法, ZL202110955840.3, 2023.05.26
(7) 章文通, 吴旸, 唐宁, 乔明, 李肇基, 张波, 具有无结终端技术功率半导体器件及制造方法和应用, ZL202110964582.5, 2023.03.28
(8) 章文通, 朱旭晗, 祖健, 乔明, 李肇基, 张波, 一种SOI横向绝缘栅双极晶体管, ZL202010888909.0, 2022.08.23
(9) 章文通, 祖健, 朱旭晗, 乔明, 李肇基, 张波, 具有等势浮空槽的低阻器件及其制造方法, ZL202010888774.8, 2022.03.08
(10) 章文通, 朱旭晗, 祖健, 乔明, 李肇基, 张波, 消除体内曲率效应的等势降场器件及其制造方法, ZL202010888944.2, 2022.03.08
(11) 章文通, 杨昆, 何俊卿, 王睿, 张森, 乔明, 王卓, 张波, 李肇基, 一种横向高压功率半导体器件的槽型终端结构, ZL201910837060.1, 2022.01.25
(12) 章文通, 叶力, 方冬, 李珂, 林祺, 乔明, 张波, 具有体内场板的分离栅VDMOS器件及其制造方法, ZL201810967996.1, 2021.11.23
(13) 章文通, 蒲松, 叶力, 赖春兰, 乔明, 李肇基, 张波, 基于超结的集成功率器件及其制造方法, ZL201810394937.X, 2021.09.07
(14) 章文通, 朱旭晗, 祖健, 乔明, 李肇基, 张波, 具有阶梯分立屏蔽槽的低栅电荷器件及其制造方法, ZL202010890066.8, 2021.08.24
(15) 章文通, 蒲松, 叶力, 赖春兰, 乔明, 李肇基, 张波, 基于超结自隔离的耗尽型增强型集成功率器件及制造方法, ZL201810395835.X, 2021.07.02
(16) 章文通, 何俊卿, 王睿, 杨昆, 乔明, 王卓, 张波, 李肇基, 分离栅VDMOS器件的终端结构, ZL201910819894.X, 2021.04.23
(17) 章文通, 何俊卿, 王睿, 杨昆, 乔明, 王卓, 张波, 李肇基, 具有低比导通电阻的槽型器件及其制造方法, ZL201910819845.6, 2021.04.20
(18) 章文通, 杨昆, 何俊卿, 王睿, 乔明, 王卓, 张波, 李肇基, 一种IGBT功率器件, ZL201910836723.8, 2021.03.30
(19) 章文通, 何俊卿, 杨昆, 王睿, 张森, 乔明, 张波, 李肇基, 具有深埋层的纵向浮空场板器件及制造方法, ZL201910819950.X, 2021.03.16
(20) 章文通, 何俊卿, 杨昆, 王睿, 张森, 乔明, 张波, 李肇基, 具有电荷平衡耐压层的纵向浮空场板器件及其制造方法, ZL201910819934.0, 2021.01.22
(21) 章文通, 杨昆, 何俊卿, 王睿, 张森, 乔明, 王卓, 张波, 李肇基, 一种超结LIGBT功率器件, ZL201910836726.1, 2021.01.22
(22) 章文通, 余洋, 李珂, 詹珍雅, 梁龙飞, 乔明, 张波, 一种高耐压横向超结器件, ZL201710642237.3, 2020.12.29
(23) 章文通, 詹珍雅, 肖倩倩, 余洋, 王正康, 乔明, 一种SOI横向高压器件, ZL201710203874.0, 2020.07.10
(24) 章文通, 詹珍雅, 李珂, 余洋, 梁龙飞, 乔明, 张波, 一种消除高电场的器件, ZL201710642100.8, 2020.03.31
(25) 张波, 章文通, 陈钢, 乔明, 李肇基, 一种具有超低比导通电阻特性的高压功率器件, 2016.10.05, 中国, ZL201410424546.X
(26) 乔明, 余洋, 章文通, 王正康, 詹珍雅, 张波, 一种横向高压器件, ZL201710496712.0, 2021.06.08
(27) 乔明, 章文通, 黄琬琰, 余洋, 张波, 一种超结半导体器件终端结构, ZL201610353060.0
(28) 乔明, 章文通, 李燕妃, 李肇基, 张波, 一种超低比导通电阻的横向高压器件, 2016.08.31, 中国, ZL201310743344.7
(29) 乔明, 章文通, 薛腾飞, 祁娇娇, 张波, 一种横向高压器件漂移区的制造方法, 2016.04.06, 中国, ZL201310526919.X
(30) 乔明, 章文通, 黄军军, 张波, 一种横向高压超结功率半导体器件, 2016.05.11, 中国, ZL201310421765.8
(31) 乔明, 蔡林希, 章文通, 胡利志, 张波, 一种部分SOI超结高压功率半导体器件, 2016.08.31, 中国, ZL201310345306.6
(32) 乔明, 许琬, 章文通, 李燕妃, 何逸涛, 张昕, 张波, 一种横向恒流二极管, 2016.01.20, 中国, ZL201310275984.X
(33) 乔明, 许琬, 张昕, 章文通, 李燕妃, 吴文杰, 张波, 一种低正向压降的二极管, ZL201310380184.4
(34) 乔明, 蔡林希, 章文通, 李燕妃, 张波, 一种超结LDMOS器件, 2015.04.15, 中国, ZL201310077827.8
(35) 乔明, 李燕妃, 章文通, 吴文杰, 许琬, 蔡林希, 陈涛, 胡利志, 黄健文, 张波, 一种横向高压功率半导体器件, 2015.08.19, 中国, ZL201210516539.3
(36) 乔明, 章文通, 李燕妃, 许琬, 蔡林希, 吴文杰, 陈涛, 胡利志, 黄健文, 张波, 一种横向超结高压功率半导体器件, 2015.08.19, 中国, ZL201210516380.5
(37) 乔明, 章文通, 许琬, 李燕妃, 张昕, 吴文杰, 张波, 一种超低比导通电阻的SOI横向高压功率器件, 2015.09.09, 中国, ZL201210518182.2
(38) 乔明, 周锌, 温恒娟, 何逸涛, 章文通, 向凡, 叶俊, 张波, 一种用于SOI高压集成电路的半导体器件, 2013.07.17, 中国, ZL201110318010.6
(39) 乔明, 银杉, 赵远远, 章文通, 温恒娟, 向凡, 周锌, 一种基于N型外延层的BCD集成器件及其制造方法, 2012.11.07, 中国, ZL201110105986.5
(40) 王卓, 祖健, 朱旭晗, 章文通, 方冬, 乔明, 李肇基, 张波, 具有高可靠性的分离栅VDMOS器件及其制造方法, ZL202010888687.2, 2023.01.24
(41) Ming Qiao, Yang Yu, Wentong Zhang, Zhengkang Wang, Zhenya Zhan, Bo Zhang, Lateral high-voltage device, 2018.09.04, 美国, US10068965B1
电子科技大学  微电子技术  大学本科毕业  工学学士学位
电子科技大学  微电子学与固体电子学  博士研究生毕业  工学博士学位
电子科技大学电子科学与技术学院(示范性微电子学院) 专任教师
电子科技大学微电子与固体电子学院 专任教师