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章文通 ( 教授 ) 赞207
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[1 Wentong Zhang*, Zhenya Zhan, Yang Yu, Shikang Cheng, Yan Gu, Sen Zhang, Xiaorong Luo, Zehong Li, Ming Qiao, Zhaoji Li, Member, IEEE, and Bo Zhang. Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI, IEEE Electron Device Letters, 2017, 38(11): 1555-1558
[2 Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. Optimization and new structure of super junction with isolator layer, IEEE Transactions on Electron Devices, 2017, 64(1): 217-223
[3 Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. The Ron,min of balanced symmetric vertical super junction based on R-well model, IEEE Transactions on Electron Devices, 2017, 64(1): 224-230
[4 Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. Optimization of Lateral Super Junction based on the Minimum Specific On-resistance, IEEE Transactions on Electron Devices, 2016, 63(5): 1984-1990
[5 Wentong Zhang*, Bo Zhang, Zehong Li, Ming Qiao and Zhaoji Li. Theory of Super Junction with NFD and FD Modes based on Normalized Breakdown Voltage, IEEE Transactions on Electron Devices, 2015, 62(12): 4114-4120
[6 Wentong Zhang*Wentong Zhang, Bo Zhang, Ming Qiao, Lijuan Wu, Kun Mao and Zhaoji Li. A Novel Vertical Field Plate Lateral Device with Ultra-low Specific On-resistance, IEEE Transactions on Electron Devices, 2014, 61(2): 518-524
[7 Wentong Zhang*, Lijuan Wu, Ming Qiao, Xiaorong Luo, Bo Zhang and Zhaoji Li. Novel high-voltage power lateral MOSFET with adaptive buried electrodes, Chinese Physics B, 2012, 21(7): 077101
[8 Wentong Zhang*, Ming Qiao, Lijuan Wu, Ke Ye, Zhuo Wang, Zhigang Wang, Xiaorong Luo, Sen Zhang, Wei Su, Bo Zhang and Zhaoji Li. Ultra-low Specific On-resistance SOI High Voltage Trench LDMOS with Dielectric Field Enhancement Based on ENBULF Concept, IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), Kanazawa, 2013, 329-332 (大会报告)
[9 Bo Zhang*, Wentong Zhang, Zehong Li, Ming Qiao and Zhaoji Li. Equivalent Substrate Model for Lateral Super Junction Device, IEEE Transactions on Electron Devices, 2014, 61(2): 525-532

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