Affiliation of Author(s):[1] University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, Chengdu, 610054, China; [2] Gree Electric Appliances, Inc., Zhuhai, 519070, China
Journal:IEEE Transactions on Power Electronics
Key Words:Discrete green's function; heat conduction; power devices; silicon carbide; thermal model
Abstract:A fast and accurate three-dimensional thermal modeling methodology based on discrete Green's function (DGF) is investigated innovatively for power electronics. Due to the demand of high robustness of power electronic systems, power devices require a fast and accurate thermal prediction or monitoring method. DGF is presented as a promising temperature prediction method, especially when facing new challenges in the complex chip packaging of power devices or the multichip layout of power modules. A detailed simulation algorithm is developed, and comparative simulations is conducted, demonstrating that the DGF method reduces computation time by more than 78% compared to the finite element method (FEM), with the same accuracy. In a double chip simulation, the result of DGF method closely matches the FEM's, demonstrating its superior accuracy in dealing with thermal coupling effects compared to traditional thermal network. Finally, an infrared thermography experiment is designed, validating the high accuracy, which indicated by the R-squared value that is over 0.98 between the results of the DGF method and experimental observations. ? 1986-2012 IEEE.
Document Type:Article in Press
ISSN No.:08858993
Translation or Not:no