张有润
Click:
The Last Update Time:..
Paper Publications
- > [1] A Novel Low On-State Resistance Si/4H-SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero-Transfer Mechanism, CRYSTALS, vol. 13, no. 5,
- > [2] Investigation of Heavy-Ions-Induced Leakage Current Modes and Degradation Mechanism in SiC MOSFETs Under Complex Heavy Ion Conditions, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 71, no. 11, pp. 6573-6580,
- > [3] Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing, 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, pp. 96-99,
- > [4] Fast and Accurate 3-D Thermal Model Based on Discrete Green's Function for Power Electronics, IEEE Transactions on Power Electronics,
- > [5] Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes, CHINESE PHYSICS B, vol. 33, no. 10,
- > [6] Design and modelling of SiC MPS diodes with superior surge current robustness, MICROELECTRONICS JOURNAL, vol. 151,
- > [7] Design of 128x32 GM-APD array ROIC with Multi-Echo Detection for single photon 3D LiDAR, SEVENTH SYMPOSIUM ON NOVEL PHOTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATIONS, vol. 11763,
| |
Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054 | Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731 | Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved