论文名称为“A K-Band High Interference-Rejection GaAs Low-Noise Amplifier Using Multizero Control Method for Satellite Communication”。该文介绍了一种采用90nm GaAs p-HEMT技术的低噪声放大器(LNA)，其工作频带为17.5-22.5 GHz，带外抑制范围为27.5-32.5 GHz和4-10 GHz。文中提出了多零点控制方法，通过产生多个零点以产生高的带外抑制和扩展抑制带宽，并通过晶体管漏极处的旁路电容陷波滤波器和级间匹配电路处的并联电容陷波滤波器来实现对多个零位的控制。通过使用该抑制方法，可以在不需要的频率上实现高抑制，且无需额外的设备。此外，该设计在晶体管的旁路支路上实现了多零位控制，在整个工作频带内都能很好的实现低噪声系数(NF)。测试结果表明，在19 GHz时测量的最大增益为23.9 dB, 3 dB带宽为17.5-22.5 GHz。同时，在4-10 GHz和27.5-32.5 GHz范围内，LNA的抗干扰性能分别为57-73 dB和61-72 dB，NF为1.1-1.3 dB。该LNA面积为2mm × 1.3 mm。该天线的设计原则和过程在文章进行了详细介绍。工作主要完成人谢恒、程钰间、樊勇。

论文连接：https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9214520

Abstract—This letter presents a 17.5–22.5-GHz low-noise amplifier (LNA) with the high out-of-band rejection in the range of 27.5–32.5 GHz and 4–10 GHz by using 90-nm GaAs p-HEMT technology. The multizero control method is proposed to produce multiple zeros for generating the high out-of-band rejection and expanding the rejection bandwidth. The multizero control is realized by bypass capacitor notch filters at the drain of transistors and shunt capacitor notch filters at the interstage matching circuits. By using this approach, the high rejection can be achieved at unwanted frequencies without additional devices. Also, the multizero control is mainly implemented in the transistor’s bypass branch, which can achieve the low noise figure (NF) well within the whole operating band. The cost and integration of the front end can also be improved. The measured maximum gain is 23.9 dB at 19 GHz, and the 3-dB bandwidth is 17.5–22.5 GHz. The good interference rejection of the proposed LNA is from 57 to 73 dB and 61 to 72 dB in the range of 4–10 GHz and 27.5–32.5 GHz, respectively. The measured NF is 1.1–1.3 dB. The LNA area is 2 mm × 1.3 mm including pads.

Index Terms—Filter, GaAs, interference rejection, K-band, low-noise amplifier (LNA), satellite communication (SatCom).