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发表刊物:NDT and E International
全部作者:Songwen Xue,Jun Xian,Yuxi Xie,Wailok Woo
第一作者:Gaige Ru
通讯作者:Bin Gao
卷号:151
期号:2025
是否译文:否
发表时间:2025-01-01
上一条:Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-/low- compound dielectric structure
下一条:[43] Zhiyuan Bai, Jiangfeng Du*, Qi Xin, Ruonan Li, Qi Yu. "Numerical Analysis of Reverse Blocking Enhancement in High-K Passivation AlGaN/GaN Schottky Barrier Diode with Gated Edge Termination", Superlattices and Microstructures, 114:143-153 (2018) . (SCI)