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Growth and band alignment of Bi2Se3 topological insulator on Hterminated Si(111) van der Waals surface
Hits:Journal:Applied Physics Letters
First Author:Handong Li
Volume:102
Issue:7
Page Number:074106
Translation or Not:no
Gender:Male
Education Level:With Certificate of Graduation for Doctorate Study
Degree:Doctor of Science
Business Address:Room 102, East Block, Computer Science Building, Shahe Campus of UESTC, Chengdu, PRC.
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