Characterization of Cryogenic Photo Diodes on the Standard 28nm Bulk CMOS Process

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Affiliation of Author(s):University of Electronic Science and Technology of China (UESTC)

Teaching and Research Group:Integrated Physics Group (IPG)

Journal:2024 IEEE MTT-S International Wireless Symposium (IWS)

Place of Publication:Beijing, China

Key Words:quantum computer, CMOS standard process, photodiode, cryogenic circuit

Abstract:Inside a quantum computer, using optical links for communication between low temperature and room temperature can reduce cooling requirements, prevent crosstalk, and simplify communication interfaces. In this paper, we propose a CMOS cryogenic photo diode fabricated on the standard 28nm bulk CMOS process without any modification, whose diagonal length is 38 micrometers, and the PN junction is formed by N-well and P substrate. We tested the response of the photodiode to 637nm red laser and 532nm green laser at room temperature and 7K low temperature, and the largest measured responsivity

Note:https://ieeexplore.ieee.org/document/10713702

All the Authors:Donghui Yan

First Author:Zonghan Dai

Indexed by:Conference

Correspondence Author:Cheng Wang

Document Code:10.1109/IWS61525.2024.10713702

Discipline:Engineering

First-Level Discipline:Electronic science and technology

Translation or Not:no

Date of Publication:2024-05-16

Date of Publication:2024-05-16