A 2-12GHz SiGe BiCMOS Cryogenic LNA with 6K Noise Temperature and 1.3mW DC Power

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Affiliation of Author(s):University of Electronic Science and Technology of China (UESTC)

Teaching and Research Group:Integrated Physics Group (IPG)

Journal:2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

Place of Publication:Chengdu, China

Key Words:cryogenic low noise amplifier, silicon germanium heterojunction bipolar transistor

Abstract:This paper presents a cryogenic 130nm SiGe BiCMOS broadband 2~12GHz low noise amplifier (LNA) for quantum bits (Qubits) readout at 4.2K. The cryogenic performance of HBT devices has been investigated firstly. The LNA is then implemented with a three-stage cascaded architecture, while the first stage adopts inductive emitter degeneration and careful transistor sizing to achieve ultra low noise and broadband input impedance matching. The following second and third stages employ resistive feedback for gain flatness and unconditional stability under cryogenic temperature.

Note:https://ieeexplore.ieee.org/document/10381379

First Author:Ruihong Wu

Indexed by:Conference

Correspondence Author:Cheng Wang

Document Code:10.1109/IMWS-AMP57814.2023.10381379

Discipline:Engineering

First-Level Discipline:Electronic science and technology

Translation or Not:no

Date of Publication:2023-11-13

Date of Publication:2023-11-13