Transparent and Durable Terahertz Absorber Based on Enhanced Wave-Ion Interaction
点击次数：发表时间：2025-05-23
- 所属单位：[1]Univ Elect Sci & Technol China, Sch Phys, State Key Lab Elect Thin Film & Integrated Devices, Chengdu 611731, Peoples R China;[2]Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China;[3]Univ Elect Sci & Technol China, Engn Ctr Integrated Optoelect & Radio Meta Chips, Chengdu 611731, Peoples R China
- 发表刊物：ADVANCED FUNCTIONAL MATERIALS
- 关键字：hydrogel; Ionic conduction loss; terahertz absorption; wave-ion interaction
- 摘要：Hydrogels, featuring high flexibility and stretchability, have intense wave-matter interaction in the terahertz (THz) band and high transparency in the visible light band, making them promising materials for transparent THz absorbers in the optical windows of THz devices. However, conventional hydrogels suffer from poor environmental stability, as water evaporation or freezing at subzero temperatures weakens their THz absorption and visible transmittance. Here, An ion-rich hydrogel film is presented to concurrently boost the THz wave-ion and intermolecular interactions. The boosted interactions increase the ionic conduction loss and improve the antidrying and antifreezing performance. As a result, with polydimethylsiloxane (PDMS) as the encapsulation layer and antireflection layer, the flexible ionic-hydrogel-based THz absorber shows a high maximum reflection loss (RL) of 86.51 dB in the 0.5-4.5 THz range (100% qualified bandwidth) and a high average visible transmittance of 90.87% with a thickness of only 300 mu m. Moreover, it still possesses a high average RL of 39.35 dB after 80 days at room temperature and a high average electromagnetic interference shielding efficiency (EMI SE) of 42.30 dB at -10 degrees C. This work demonstrates the feasibility of transparent ionic THz absorbers, offering inspiration for future ionic THz device designs.
- 文献类型：Article; Early Access
- ISSN号：1616-301X
- 是否译文：否
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- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
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- 2012 当选： 新世纪优秀人才计划
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