Mo4B-3 A 5.2∼7.8 GHz Cryo-CMOS LNA with 4-K Noise Temperature with Cascode gm-boosting and Current Reuse for Noise Reduction

2026-06-27 Hits:

Affiliation of Author(s):University of Electronic Science and Technology of China (UESTC)

Teaching and Research Group:Integrated Physics Group (IPG)

Journal:Radio Frequency Integrated Circuits (RFIC)

Place of Publication:Boston, MA, US

Key Words:Cryogenic CMOS, low-noise amplifier (LNA), gm-boosting, current reuse, qubit readout

Abstract:Fidelity of quantum state discrimination is limited by the noise temperature of cryogenic low noise amplifier (LNA), due to the temp.-independent shot noise, thermal noise due to device self-heating, and noise-impedance mismatch. This work presents a 5.2∼7.8 GHz cryo-CMOS LNA, exploring the noise boundary of CMOS technology at 4.2 K. For the 1st-stage cascode device, the size (240 µm/60 nm) and current density (∼44 µA/µm) are optimized for low Fano factor (F ) of shot noise and high transconductance gm. Since high transconductance efficiency gm2 /ID leads to low noise, a transformer-based gm-b

Note:https://ims-ieee.org/rfic/home

All the Authors:Hang Fu,Haotian Chen

First Author:Yujie Geng

Indexed by:Conference

Correspondence Author:Cheng Wang

Discipline:Engineering

First-Level Discipline:Electronic science and technology

Page Number:207-210

Translation or Not:no

Date of Publication:2026-06-07

Date of Publication:2026-06-07