周琦
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发表刊物：2022 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
页面范围：169-172
是否译文：否
发表时间：2022-05-12
上一条：The non-monotonic instability of VTH and Rds,on in P-GaN Gate HEMTs Under Repetitive Short Circuit Stress: The role of electric-field & self heating effect
下一条：Threshold voltage instability of p-GaN gate HEMT in 48-12V buck converter & its impact on circuit power loss variation
