周琦

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教授
博士生导师
- 性别:男
- 毕业院校:香港科技大学
- 学历:博士研究生毕业
- 学位:哲学博士学位
- 在职信息:在职人员
- 所在单位:集成电路科学与工程学院(示范性微电子学院)
- 职务 : Porfessor
- 学科:微电子学与固体电子学
- 曾获荣誉:中国电子学会优秀科技工作者(2017)
四川省电子学会“电子科学技术奖”一等奖(2015)
访问量 :
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[1]
Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress
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[2]
A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor FieldEffect Transistor with a Buried Back Gate for Gallium Nitride SingleChip Complementary Logic Circuits
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[3]
Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs
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[4]
High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility
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[5]
Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses
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[6]
The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique
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[7]
A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density
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[8]
The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
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[9]
A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage
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[10]
Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
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[11]
Kevin J Chen
,
SJ Cai
,
ZH Feng
,
Chunhua Zhou
,
Hongwei Chen
,
and Qi Zhou
,
Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage, IEEE Electron Device Letters, vol. 33, no. 1, pp. 38-40,
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[12]
Yuanyuan Shi
,
Chao Yang
,
Qi Zhou
,
and [J-1]Anbang Zhang
,
A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode, Nanoscale research letters,