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    王成

    • 教授 博士生导师
    • 主要任职:电子科技大学
    • 性别:男
    • 学历:博士研究生毕业
    • 学位:哲学博士学位
    • 入职时间: 2021-02-20
    • 学科:电路与系统
    • 办公地点:清水河校区科研4号楼A区232房间
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    • 2022当选:国家优秀青年基金获得者

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    13.4 Xiling: Cryo-CMOS 18-bit Dual-DAC Manipulator with 4.6μV Precision and 4.1nV/Hz^0.5 Noise Co-Integrated with the Single Electron Transistor at 60mK

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    发表刊物:2025 IEEE International Solid-State Circuits Conference (ISSCC)

    刊物所在地:San Francisco, CA, USA

    摘要:Millions of physical quantum-bits (Qubits) are envisioned for a fault-tolerant quantum computer [1]. Compared with the superconducting Qubit or trapped-ions, the silicon spin Qubits are scaling friendly due to the compatibility with the advanced silicon process. Intel recently reveals the fabrication and 1.6K verification of hundreds of Si/SiGe quantum dots on a 300mm Si wafer [2]. In addition, through the Coulomb blockade, the single electron transistor (SET) controls the flow of the electron between the source and drain to a quantum dot built either by a single phosphorus atom on Silicon [3]

    备注:https://ieeexplore.ieee.org/document/10904579
    Research highlight of Nature Electronics:
    https://www.nature.com/articles/s41928-025-01370-w

    全部作者:Yifei Zhang,Haichuan Lin

    第一作者:Yingjie Li

    论文类型:会议

    通讯作者:Cheng Wang

    论文编号:10.1109/ISSCC49661.2025.10904579

    页面范围:242-243

    是否译文:

    发表时间:2025-02-16