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    王成

    • 教授 博士生导师
    • 主要任职:电子科技大学
    • 性别:男
    • 学历:博士研究生毕业
    • 学位:哲学博士学位
    • 入职时间: 2021-02-20
    • 学科:电路与系统
    • 办公地点:清水河校区科研4号楼A区232房间
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    • 2022当选:国家优秀青年基金获得者

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    Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK

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    发表刊物:IEEE Journal of Solid-State Circuits (JSSC)

    关键字:Calibration, cryogenic CMOS (Cryo-CMOS), quantum computing, R-2R DAC, single-electron transistor

    摘要:Millions of quantum-bits (qubits) are envisioned for a fault-tolerant quantum computer. For scalability, silicon spin qubit stands out due to its compatibility with advanced CMOS processes. Silicon single-electron transistors (SETs) are widely adopted for the quantum state discrimination of spin qubits. For high-fidelity quantum logic gate and readout, the gate electrodes of the above Si quantum devices require a biasing voltage with ~10- μ V precision to define the electron occupation, and ultra-low noise to suppress the charge noise induced decoherence. In addition, the co-integration of a l

    备注:https://ieeexplore.ieee.org/document/11434877

    全部作者:Yifei Zhang,Haichuan Lin

    第一作者:Yingjie Li

    论文类型:Journal

    通讯作者:Cheng Wang

    论文编号:10.1109/JSSC.2026.3671795

    学科门类:工学

    一级学科:电子科学与技术

    卷号:N/A

    期号:N/A

    页面范围:1-13

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    发表时间:2026-03-16