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    王成

    • 教授 博士生导师
    • 主要任职:电子科技大学
    • 性别:男
    • 学历:博士研究生毕业
    • 学位:哲学博士学位
    • 入职时间: 2021-02-20
    • 学科:电路与系统
    • 办公地点:清水河校区科研4号楼A区232房间
    • 联系方式:
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    • 2022当选:国家优秀青年基金获得者

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    Characterization of Cryogenic Photo Diodes on the Standard 28nm Bulk CMOS Process

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    所属单位:University of Electronic Science and Technology of China (UESTC)

    教研室:Integrated Physics Group (IPG)

    发表刊物:2024 IEEE MTT-S International Wireless Symposium (IWS)

    刊物所在地:Beijing, China

    关键字:quantum computer, CMOS standard process, photodiode, cryogenic circuit

    摘要:Inside a quantum computer, using optical links for communication between low temperature and room temperature can reduce cooling requirements, prevent crosstalk, and simplify communication interfaces. In this paper, we propose a CMOS cryogenic photo diode fabricated on the standard 28nm bulk CMOS process without any modification, whose diagonal length is 38 micrometers, and the PN junction is formed by N-well and P substrate. We tested the response of the photodiode to 637nm red laser and 532nm green laser at room temperature and 7K low temperature, and the largest measured responsivity

    备注:https://ieeexplore.ieee.org/document/10713702

    全部作者:Donghui Yan

    第一作者:Zonghan Dai

    论文类型:国际会议

    通讯作者:Cheng Wang

    论文编号:10.1109/IWS61525.2024.10713702

    学科门类:工学

    一级学科:电子科学与技术

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    发表时间:2024-05-16