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所属单位：Massachusetts Institute of Technology (MIT)

发表刊物：IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS-I)

刊物所在地：USA

关键字：Terahertz (THz), integrated circuit (IC), silicon technology, CMOS, SiGe, BiCMOS, THz source

摘要：Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the past decade. The demonstrated basic component performance, as well as the maturity of design tools and methodologies, have made it possible to build high-complexity THz integrated systems. Such implementations are undoubtedly highly attractive due to their low cost and high integration capability; however, their unique characteristics, both advantageous and disadvantageous, also call for research investigations into unconventional systematic architectures and novel THz applications.

备注：https://ieeexplore.ieee.org/document/9457039

全部作者：Cheng Wang,Zhi Hu,Jack W. Holloway,Muhammad Ibrahim Wasiq Khan,Mohamed I. Ibrahim,Mina Kim,Georgios C. Dogiamis,Bradford Perkins,Mehmet Kaynak,Rabia Tugce Yazicigil,Anantha P. Chandrakasan

第一作者：Xiang Yi

论文类型：期刊

通讯作者：Ruonan Han

论文编号：10.1109/TCSI.2021.3087604

学科门类：工学

一级学科：电子科学与技术

卷号：68

期号：9

页面范围：3537-3550

是否译文：否

发表时间：2021-09-01