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所属单位：University of Electronic Science and Technology of China (UESTC)

教研室：Integrated Physics Group (IPG)

发表刊物：2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

刊物所在地：Chengdu, China

关键字：cryogenic low noise amplifier, silicon germanium heterojunction bipolar transistor

摘要：This paper presents a cryogenic 130nm SiGe BiCMOS broadband 2~12GHz low noise amplifier (LNA) for quantum bits (Qubits) readout at 4.2K. The cryogenic performance of HBT devices has been investigated firstly. The LNA is then implemented with a three-stage cascaded architecture, while the first stage adopts inductive emitter degeneration and careful transistor sizing to achieve ultra low noise and broadband input impedance matching. The following second and third stages employ resistive feedback for gain flatness and unconditional stability under cryogenic temperature.

备注：https://ieeexplore.ieee.org/document/10381379

第一作者：Ruihong Wu

论文类型：国际会议

通讯作者：Cheng Wang

论文编号：10.1109/IMWS-AMP57814.2023.10381379

学科门类：工学

一级学科：电子科学与技术

是否译文：否

发表时间：2023-11-13