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    王成

    • 教授 博士生导师
    • 主要任职:电子科技大学
    • 性别:男
    • 学历:博士研究生毕业
    • 学位:哲学博士学位
    • 入职时间: 2021-02-20
    • 学科:电路与系统
    • 办公地点:清水河校区科研4号楼A区232房间
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    • 2022当选:国家优秀青年基金获得者

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    A Cryo-CMOS 20-Bit R-2R Ladder DAC for the Manipulation of Silicon and Carbon Nanotube Qubits

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    所属单位:University of Electronic Science and Technology of China (UESTC)

    教研室:Integrated Physics Group (IPG)

    发表刊物:2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

    刊物所在地:Chengdu, China

    关键字:Cryo-CMOS, digital-to-analog converter, R-2R ladder, silicon Qubit, carbon nanotube Qubit

    摘要:This paper presents a 65nm cryogenic CMOS, high-precision (20-bit), low noise, low power digital-to-analog converter (DAC) designed for the manipulation of silicon and carbon nanotube qubits. The DAC adopts a R-2R ladder architecture with built-in calibration. The lower 14-bits of DAC adopt a binary weighted R-2R ladder, while the higher 6-bits adopt a thermometer-coded equally-weighted resistor network. It uses a 6R-3R calibration scheme to improve the linearity. Measured under 6K, the DAC achieves a differential linearity (DNL) ≤+/−3LSB, an output noise spectral density of 3.374nV/√Hz@10kHz

    备注:https://ieeexplore.ieee.org/document/10381481
    Best student paper award.

    全部作者:Yan Xu

    第一作者:Yingjie Li

    论文类型:国际会议

    通讯作者:Cheng Wang

    论文编号:10.1109/IMWS-AMP57814.2023.10381481

    学科门类:工学

    一级学科:电子科学与技术

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    发表时间:2023-11-13