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    王成

    • 教授 博士生导师
    • 主要任职:电子科技大学
    • 性别:男
    • 学历:博士研究生毕业
    • 学位:哲学博士学位
    • 入职时间: 2021-02-20
    • 学科:电路与系统
    • 办公地点:清水河校区科研4号楼A区232房间
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    • 2022当选:国家优秀青年基金获得者

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    Filling the Gap: Silicon Terahertz Integrated Circuits Offer Our Best Bet

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    所属单位:Massachusetts Institute of Technology

    发表刊物:IEEE Microwave Magazine

    刊物所在地:USA

    摘要:The definition for the frequency range of a terahertz wave varies in the literature. Some refer to terahertz as the spectrum between 300 GHz (λ = 1 mm) and 3 THz (λ = 0.1 mm) to distinguish it from its millimeter-wave counterpart (30-300 GHz). Others adopt a decimal pattern and a loosely defined frequency range from 100 GHz to 10 THz. Based on the latter definition, probably the earliest documented endeavor to reach terahertz frequency was published in a paper in Physical Review in 1923 [1]. In this nearly century-old work, authors Nichols and Tear generated a 0.17-THz signal using a spark-gap

    备注:https://ieeexplore.ieee.org/document/8661721

    全部作者:Zhi Hu,Cheng Wang,Jack Holloway,Xiang Yi,Mina Kim,James Mawdsley

    第一作者:Ruonan Han

    论文类型:期刊

    论文编号:10.1109/MMM.2019.2891379

    学科门类:工学

    一级学科:电子科学与技术

    卷号:20

    期号:4

    页面范围:80-93

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    发表时间:2019-04-01