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所属单位：Massachusetts Institute of Technology (MIT)

发表刊物：2016 IEEE International Electron Devices Meeting (IEDM)

刊物所在地：San Francisco, CA, USA

摘要：This paper summarizes our approaches which synthesize the optimum electromagnetic (EM)-wave environment around various silicon devices, in order to maximize the device efficiency with minimum passive loss and footprint. This has enabled multi-mW THz radiation in standard silicon processes. Various critical capabilities for future THz microsystems, including integrated phase locking, multi-pixel coherent imaging, and an ultra-broadband inter-chip waveguide link, are also demonstrated.

全部作者：J. W. Holloway,C. Jiang,A. Mostajeran,E. Afshari,A. Cathelin,Y. Zhang,K. K. O.,L. Boglione,T. M. Hancock,C. Wang,Z. Hu,G. Zhang

第一作者：R. Han

论文类型：国际会议

论文编号：10.1109/IEDM.2016.7838507

学科门类：工学

一级学科：电子科学与技术

页面范围：29.6.1-29.6.4

ISSN号：2156-017X

是否译文：否

发表时间：2016-12-03