点击次数：

所属单位：Massachusetts Institute of Technology (MIT)

发表刊物：2017 IEEE International Electron Devices Meeting (IEDM)

刊物所在地：San Francisco, CA, USA

关键字：terahertz, large-scale array, radiation, spec troscopy, CMOS, SiGe

摘要：The high integration capability of silicon technologies, as well as the small wavelength of terahertz (THz) signals, make it possible to build a high-density, very-large-scale active THz array on a single chip. This is, however, very challenging in practice, due to the low device efficiency and large footprint of conventional circuit designs. To address these problems, we introduce a set of compact while versatile circuits, which utilize the multi-mode behaviors from structures with tight device-electromagnetic integration.

备注：https://ieeexplore.ieee.org/document/8268377

全部作者：Zhi Hu,Guo Zhang,J. Holloway

第一作者：Cheng Wang

论文类型：国际会议

通讯作者：Ruonan Han

论文编号：10.1109/IEDM.2017.8268377

学科门类：工学

一级学科：电子科学与技术

页面范围：294-297

是否译文：否

发表时间：2017-12-02