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所属单位：University of Electronic Science and Technology of China (UESTC)

教研室：Integrated Physics Group (IPG)

发表刊物：Radio Frequency Integrated Circuits (RFIC)

刊物所在地：Boston, MA, US

关键字：Cryogenic CMOS, low-noise amplifier (LNA), gm-boosting, current reuse, qubit readout

摘要：Fidelity of quantum state discrimination is limited by the noise temperature of cryogenic low noise amplifier (LNA), due to the temp.-independent shot noise, thermal noise due to device self-heating, and noise-impedance mismatch. This work presents a 5.2∼7.8 GHz cryo-CMOS LNA, exploring the noise boundary of CMOS technology at 4.2 K. For the 1st-stage cascode device, the size (240 µm/60 nm) and current density (∼44 µA/µm) are optimized for low Fano factor (F ) of shot noise and high transconductance gm. Since high transconductance efficiency gm2 /ID leads to low noise, a transformer-based gm-b

备注：https://ims-ieee.org/rfic/home

全部作者：Hang Fu,Haotian Chen

第一作者：Yujie Geng

论文类型：国际会议

通讯作者：Cheng Wang

学科门类：工学

一级学科：电子科学与技术

页面范围：207-210

是否译文：否

发表时间：2026-06-07